Your browser does not support JavaScript!
長庚大學 綠色科技研究中心
分類清單
邱顯欽

邱顯欽

教授

 

電話

(03)2118800#3350

Email

hcchiu@mail.cgu.edu.tw

實驗室

微波毫米波高速元件實驗室(工學院10)

學歷

  • 國立中央大學電機工博士 ( 2003/5 )
  • 國立中央大學電機工程學士 ( 1998/6 )  

經歷

服務機關

職稱

起訖年月(西元年/)

現職:   長庚大學

副教授

2007  / 8   迄今 

經歷: 穩懋半導體

資深工程師

2003  / 2   2004 /  5 

長庚大學

教授

2004 /  2  2004/ 5

 斐陶斐榮譽會員

    /       / 

      長庚大學

助理教授

2004  / 6   2007 /  7

開授課程

98學年度第二學期

  • 電子電路設計
    主動微波電路設計

專長與研究領域

  • 砷化鎵深次微米高速電子元件製作與模型
  • 微波工程與毫米波積體電路
  • 氮化鎵發光元件與高崩潰電壓場效電晶體
  • 原子層沈積技術與氧化鋅薄膜電晶體

簡歷

Hsien-Chin Chiu was born in TaipeiTaiwan, R.O.C. He received the B.S. degree and the Ph.D degree in electrical engineering from National Central UniversityChungliTaiwan, in June, 1998 and January, 2003, respectively. After he received the Ph.D degree, he joined WIN Semiconductors Corp., Tao YuanTaiwan, where he was engaged in researching and developing of the 6-inch GaAs pHEMTs and related integrated circuits. In June, 2004, he joined in the EE Dept. of Chang Gung University faculty team and focused on the microwave, millimeter wave integrated circuits, GaAs and GaN FETs fabrication and modeling. He is a member of Phi Tau Phi.

著作列表

Journal articles & book chapters:
期刊論文(Journal Papers):
2000年
Hsien-Chin Chiu, Feng-Tso Chien, Shih-Cheng Yang, Chin-Wei Kuo, and Yi-Jen Chan, “Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layer,” Electronics. Lett., vol.36, pp.1320-1322, 2000. (NSC89-2219-E-008-003)
Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, Jenn-Ming Kuo,“High schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance,” Electronics. Lett., vol.36, pp.1968-1969, 2000. (NSC89-2219-E-008-003)
2001年
Shih-Cheng Yang, Hsien-Chin Chiu, Feng-Tso Chien, Yi-Jen Chan, Jenn-Ming Kuo “RIE Gate-Recessed (Al0.3Ga0.7)0.5In0.5P/InGaAs Double Doped-Channel FETs Using CHF3+BCl3 Mixing Plasma,” IEEE, Electron Device Lett., vol. 22, pp. 170-172, 2001. (NSC90-2219-E-008-001)
Hsien-Chin Chiu, Shih-Cheng Yang, Feng-Tso Chien, Yi-Jen Chan, “High Power Density of AlGaAs/InGaAs Doped-channel FETs with Low DC Power Supply”Electronics. Lett., vol.37, pp.597-598, 2001. (NSC90-2219-E-008-001)
Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, and Hao-Hsiung Lin, “High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-channel FETs” IEICE Transaction. on Electronics, vol. E84-C, pp.1312-1317, 2001. (NSC90-2219-E-008-001)
Feng-Tso Chien, Hsien-Chin Chiu, Shin-Cheng Yang, Chii-Wen Chen, and Yi-Jen Chan “Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-channel Design” IEICE Transaction. on Electronics, vol. E84-C, pp.1306-1311, 2001. (NSC90-2219-E-008-001)
 Hsien-Chin Chiu, Shih-Cheng Yang, and Yi-Jen Chan, “AlGaAs/InGaAs Heterostructure Doped-channel FETs Exhibiting Good Electrical Performance at High Temperatures” IEEE Trans. Electron Device , vol 48, pp.2210-2215, 2001. (NSC90-2219-E-008-001)
Shih-Cheng Yang, Hsien-Chin Chiu, Yi-Jen Chan, Hao-Hsiung Lin, Jenn-Ming Kuo “(AlxGa1-x)0.5In0.5P/In0.15Ga0.85As (x=0, 0.3, 1.0) Heterostructure Doped-Channel FETs for Microwave Power Applications” IEEE Trans. Electron Device ,vol 48, pp.2906-2910, 2001. (NSC90-2219-E-008-001)
2002年
Hsien-Chin Chiu, Shih-Cheng Yang, Feng-Tso Chien, and Yi-Jen Chan, “Improved  Device Linearity of AlGaAs/InGaAs HFETs By a Second Mesa Etching” IEEE, Electron Device Lett., vol. 23, pp. 1-3, 2002. (NSC90-2219-E-008-001) (impact factor =2.093 )
Hsien-Chin Chiu, Ming-Jyh Hwu, Shih-Cheng Yang, and Yi-Jen Chan, “Enhanced Power  Performance of Enhancement-Mode Al0.5Ga0.5As/ In0.15Ga0.85As pHEMTs Using A Low-k BCB Passivation”.IEEE, Electron Device Lett., vol. 24, pp.243-245, 2002. (NSC90-2219-E-008-001) (impact factor =2.093 )
Hsien-Chin Chiu, Shih-Cheng Yang and Yi-Jen Chan, “High power density and largevoltage swing of enhancement-mode AlGaAs/InGaAs pHEMTs for 3.5V L-band applications,” Jpn. J. Appl. Phys. vol. 41, Pt.1, No. 5A, pp.2902-2903, 2002. (NSC90-2219-E-008-001)
2003年
Hsien-Chin Chiu, Tsung-Jung Yeh, Shih-Cheng Yang, Ming-Jyh Hwu, and Yi-Jen Chan, “High Performance BCB-Bridged AlGaAs/InGaAs Power HFETs” IEEE Trans. Electron Device vol. 50, pp.1532-1536, 2003. (NSC91-2215-E-008-026) (impact factor =1.936 )
Shih-Cheng Yang, Hsien-Chin Chiu, Ming-Jyh Hwu, Wen-Kai Wang, Cheng-Kuo Lin,  and Yi-Jen Chan, “Submicron RIE Recessed InGaP/InGaAs Doped-channel FETs” IEEE Trans. Electron Device ,vol. 50, pp.1555-1558, 2003. (NSC91-2215-E-008-026)
Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, Shu-Han Chen, Wei Sheng Liu, and  Jen-Inn. Chyi, “The Microwave Power Performance Comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) Doped-Channel HFETs” IEEE Trans. Electron Device ,vol. 51, pp.156-158, 2004. (NSC91-2215-E-008-026) (impact factor =2.215 )
Ming-Jyh Hwu, Hsien-Chin Chiu, Shih-Cheng Yang and Yi-Jen Chan, “A Novel Double-Recessed 0.2 μm T-Gate Process for Heterostructure InGaP/InGaAs Doped-Channel FET Fabrication” IEEE, Electron Device Lett., vol. 24, pp. 381-383, 2003. (NSC91-2215-E-008-026)
Hsing-Yuan Tu, Tao-Hsuan Chou, Yo-Sheng Lin, Hsien-Chin Chiu, Ping-Yu Chen, and Shey-Shi Lu, “DC and RF Characteristics of E-mode Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic HEMT’s (pHEMT’s)” IEEE, Electron Device Lett., vol. 24, pp. 132-134, 2003. (NSC91-2215-E-008-026)
Ming-Jyh Hwu, Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan and Liann-Be Chang, “Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs DCFETs” Jpn. J. Appl. Phys. vol. 43, No.1, pp.111-112, 2003. (NSC91-2215-E-008-026)
Hsien-Chin Chiu, Shih-Cheng Yang, Cheng-Kuo Lin, Ming-Jyh Hwu, Yi-Jen Chan, “0.2mm Gate-Length InGaP/InGaAs DCFET for C-Band MMIC Amplifier Applications” IEEE Trans. Electron Device ,vol. 50, pp.1599-1603, 2003. (NSC91-2215-E-008-026) (impact factor =1.936 )
2004年
 Hsien-Chin Chiu, Shih-Cheng Yang, Cheng-Kuo Lin, Ming-Jyh Hwu, H. K. Chiou, Yi-Jen  Chan, “K-Band Monolithic InGaP/InGaAs DCFET Amplifier Using BCB Coplanar Waveguide Technology” IEEE, Electron Device Lett., vol. 25, pp. 253-255, 2004. (NSC91-2215-E-008-026) (impact factor =2.732, 15/209 )
2005年
W. S. Tung, H. C. Chiu, Y. C. Chiang, “Implementation of millimeter-wave bandpass filter with MMIC technology” Electronics. Lett., vol.41, pp.744-745, 2005. (Impact Factor = 0.98,72/209)
Hsien-Chin Chiu, Yi-Chyun Chiang, Chan-Shin Wu, “A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology” Solid-State Electronics, vol.49, pp. 1391-1395, 2005. (NSC-93-2215-E-182-010)(impact factor =1.212, 53/209 )
Hsien-Chin Chiu, Yi-Chyun Chiang, Chan-Shin Wu, “High Breakdown Voltage (Al0.3Ga0.7)0.5In0.5P/ InGaAs Quasi Enhancement-Mode pHEMT with Field-Plate Technology” IEEE, Electron Device Lett., vol. 26, pp. 701-703, 2005. (NSC-93-2215-E-182-010) (impact factor =2.538, 15/209 )
Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “Power and Linearity Comparisons of Gate- and Source-terminated Field-plate Pseudomorphic HEMTs”, Semicond. Sci. Technol., vol. 20, pp. 1183-1186, 2005. (NSC-93-2215-E-182-010) (impact factor =2.152, 22/209)
Feng-Tso Chien, Jin-Mu Yin, Hsien-Chin Chiu, and Yi-Jen Chan, “Device Performance Improvement of InGaP/InGaAs DCFETs”, IEEE, Electron Device Lett., vol. 26, pp. 861-863, 2005. (impact factor =2.538, 15/209 )
Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “High Uniformity (Al0.3Ga0.7)0.5In0.5P/ InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess” Electrochemical and Solid-State lett., vol. 9, pp. G59-G61, 2006. (NSC94-2215-E- 182-005) (impact factor =2.2, 10/22 )
Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “High Uniformity Enhancement- and Depletion-Mode InGaP/InGaAs pHEMTs Using Selective Succinic Acid Gate Recess Process” Semicond. Sci. Technol., vol. 21, pp. 55-59, 2006. (NSC94-2215-E- 182-005) (impact factor =1.2, 60/208 )
Chia-Shih Cheng, Yuan-Jui Shih, Hsien-Chin Chiu, “A Modified Angelov Model for InGaP/InGaAs Enhancement- and Depletion-Mode pHEMTs Using Symbolic Defined Device Technology” , Solid-State Electronics, vol 50, pp. 254-258, 2006. (NSC94-2215-E-182-005) (impact factor =1.247, 58/208 )
2006年
F. T. Chien, C. N. Liao, C. L. Wang, H. C. Chiu, “ High performance power MOSFETs by wing-cell structure design”, IEICE Transaction. on Electronics,vol. E89-C, no. 5, pp. 591-595, 2006. (impact factor =0.479, 132/208 )
Hsien-Chin Chiu, Chia-Shih Cheng, “Microwave Performance of (Al0.3Ga0.7)0.5In0.5P, In0.5Ga0.5P, Al0.28Ga0.72As Enhancement-mode Pseudomorphic HEMT with Succinic Acid Gate Recess Process” J. Electrohem. Soc. vol 153, pp. G897-G900, 2006. (NSC94-2215-E- 182-005) (impact factor =2.19, 2/19 )
Hsien-Chin Chiu, Liann-Be Chang, Yuan-Chang Huang, Chung-Wen Chen, Yu-Jen Li*, Yi-Jen Chan, “Improved Schottky Leakage Current of ln0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs Using (NH4)2Sx Treatment”Electrochemical and Solid-State Lett, vol. 9, pp.G309-G311 2006. (NSC94-2215-E- 182-005) (impact factor =2.152, 10/22 )
Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, “ High Linearity Performance of 0.13 um CMOS devices using Field-Plate Technology”, IEEE, Electron Device Lett., vol. 27, pp. 843-845, 2006. (impact factor =2.825, 7/208 )
Hsien-Chin Chiu, Chia-Shih Cheng, Chien-Cheng Wei, “Microwave Performance of AlGaAs/InGaAs Pseudomorphic HEMT with Tunable Field-Plate Voltage” Semicond. Sci. Technol., vol. 21, pp. 1432-1436, 2006. (NSC 95-2221-E-182 -058) (impact factor =1.2, 60/208 )
2007年
Liann-Be Chang, Chia-Hwa Chang, Ming-Jer Jeng, Hsien-Chin Chiu, and Hung-Fei Kuo, “Barrier Height Enhancement of AlxGa1−xN/GaN Schottky Diodes Prepared by P2S5(NH4)2S Treatments, Electrochemical and Solid-State Lett, vol. 10, pp.H79-H81 2007. (impact factor =2.0, 9/22 )
Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, "A Low Noise 3.1 to 10.6 GHz pMOS Distributed Amplifier for Ultra-Wideband Applications”Microwave and Optical Technology Letter, vol 49, pp. 1641-1644, 2007.(impact factor =0.568, 125/206 )
C. N. Liao, F. T. Chien, C. L. Wang, H. C. Chiu, Y. J. Chan, “A novel power MOSFET structure with shallow junction dual well design”, IEICE Transaction. on Electronics, vol. E90-C, no. 5, pp. 937-941, 2007. (impact factor =0.508,129/206 )
Chia-Sung Wu, Hsing-Chung Liu, Zhi-Ping Liu, Hsien-Chin Chiu, “Compact K-band bandpass filter on high-k LiNbO3 substrate” Solid-State Electronics, vol.51, pp. 965-968, 2007. (impact factor =1.259, 63/227 )
Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, “A 12-GHz Low Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors” IEEE Trans. Electron Device ,vol. 54, pp.2803-2807, 2007.(impact factor =2.165,20/227)
Chia-Song Wu, Hsien-Chin Chiu, “A Power Amplifier MMIC Using the CPW Structure Technology”, Microwave Journal, vol.50, pp.112-124, 2007.(impact factor =0.191,202/227)
2008年
Hsien-Chin Chiu, Chung-Wen Chen, Yuan-Chang Huang, “Power Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs”, IEEE Trans. Electron Device, vol.55, pp.256-260, 2008. (impact factor =2.73, 28/229)
Hsien-Chin Chiu, Chia-Shih Cheng, Chien-Cheng Wei, Yuan-Jui Shih, Shao-Wei Lin, and Feng-Tso Chien, “An 3-5 GHz Ultra Wideband Low Noise Amplifier Using InGaP/InGaAs Enhancement-Mode pHEMT Technology”Microwave Journal, vol.51, no.6, pp.86-98, 2008. (impact factor =0.52, 164/229)
Chien-Cheng Wei, Hsien-Chin Chiu, and Wu-Shiung Feng, “An Improved BSIM4 Model for 0.13-μm RF CMOS Using a Simple Lossy Substrate Extraction Method” Microwave Journal, vol.51,no.5 pp.170-185, 2008.(impact factor =0.52, 164/229)
Chia-Song Wu, Hsing-Chung Liu, Hsien-Chin Chiu, Wei-Hsien Lee, “Distributed Trans-impedance Amplifiers Using InGaP/InGaAs Enhancement-mode pHEMT Technology” Microwave Journal, vol.51, pp.140-151, 2008. (impact factor =0.52, 164/229)
Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng, Chien-Cheng Wei “Microwave Performance of Field-Plate 0.13-μm MOS Transistors with Varying Field-Plate Extension” Solid-State Electronics, vol 52, pp. 725-729, 2008 (impact factor =1.424, 81/229)
Hsien-Chin Chiu, Chia-Shih Cheng , Yi-Tzu Yang , and Chien-Cheng Wei, “A 10 GHz Low Phase-Noise CMOS Voltage-Controlled Oscillator Using Dual-Transformer Technology” Solid-State Electronics, vol 52, pp. 765-770, 2008 (impact factor =1.424, 81/229)
Hsien-Chin Chiu, Yuan-Chang Huang, Chung-Wen Chen, and Liann-Be Chang, “Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2Sx Pretreatment”, IEEE Trans. Electron Device, vol.55, pp.721-726, 2008. (impact factor =2.73, 28/229)
Feng-Tso Chien, Chien-Nan Liao, Jin-Mu Yin, Hsien-Chin Chiu and Yao-Tsung Tsai, “In0.49Ga0.51P/In0.15Ga0.85As doped channel FETs with a metal plug alloy process” Semicond. Sci. Technol., vol. 23, 035009 (5pp), 2008  (impact factor =1.434, 79/229 )
Feng-Tso Chien, Chien-Nan Liao, Chi-Ling Wang, Hsien-Chin Chiu, Yao-Tsung Tsai, “Low On-Resistance Trench Power MOSFETs Design” Electronics. Lett., vol.44, pp.232-234, 2008. (impact factor =1.14, 108/229 )
Hsien-Chin Chiu, Yuan-Chang Huang, Liann-Be Chang, and Feng-Tso Chien,“GaAs Pseudomorphic HEMT With Insulating Gate Films Formed By P2S5/(NH4)2SX Sulfurization of Recessed GaAs Surface”, Semicond. Sci. Technol., vol. 23, 035029 (5pp), 2008  (impact factor =1.434, 79/229 )
Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng, Chien-Cheng Wei,“ Comprehensive Study of Gate-terminated and Source-terminated Field-Plate 0.13-μm NMOS Transistors” Semicond. Sci. Technol., vol. 23, 035030 (5pp), 2008. (impact factor =1.434, 79/229 )
Hsien-Chin Chiu, Chien-Cheng Wei, Chia-Shih Cheng, Yu-Fei Wu, “Phase-Noise Improvement of GaAs pHEMT K-Band Voltage Controlled Oscillator Using Tunable Field-Plate Voltage Technology”, IEEE, Electron Device Lett.,vol. 29, pp. 426-429, 2008. (impact factor =3.049, 23/229 )
Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, Jeffrey. S. Fu ,and Wu-Shiung Feng, “ An UWB CMOS Voltage-Controlled Oscillator with 2-6GHz Tuning-Range Using Active Inductor Technology”, Microwave and Optical Technology Letter, vol 50, pp. 2311-2315, 2008. (impact factor =0.743, 144/229)
Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Ming-Yang Chen, “Enhanced optical responsivity of InAlAs/InGaAs metamorphic HEMT using ITO transparent gate technology”, Appl. Phys. Lett., vol, 93, 043506, 2008,(impact factor =3.726, 10/95 )
Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide    Layer” IEEE Trans. Electron Device, vol.55, pp.3305-3309, 2008. (impact factor =2.73, 28/229)
Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Liann-Be Chang, “Comprehensive Study of GaAs MOSFETs using Gadolinium Oxide and Praseodymium Oxide Layers” J. Electrohem. Soc. vol 155, pp. H955-G958, 2008. (impact factor =2.437, 1/16 )
2009年
Hsien-Chin Chiu, Jeffrey. S. Fu, Chung-Wen Chen, “ RF Performance of GaAs pHEMT Switches with Various Upper/Lower δ-Doped Ratio Designs”, Solid-State Electronics, vol 53, pp.181-184, 2009  (impact factor =1.424, 81/229)
Hsien-Chin Chiu, Chia-Shih Cheng, Shao-Wei Lin, Chien-Cheng Wei, “A High-linearity Single-Pole-Double-Throw Pseudomorphic HEMT Switch Based on Tunable Field-Plate Voltage Technology”, IEEE Trans. Electron Device,vol.56, pp.541-545, 2009. (impact factor =2.73, 28/229)
Chun-Ting Pan, Ren-Jie Hou, Yue-Ming Hsin and Hsien-Chin Chiu, “Characteristics of AZO/GaN Heterojunction Bipolar Transistors” Electronics. Lett., vol.45, pp.744-745, 2009. (impact factor =1.14, 108/229)
Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, “ The Characteristics of Dual δ-Doped InGaP/InGaAs pHEMTs with Various Doping Profile” J. Electrohem. Soc. vol 156, pp. H512-H515, 2009. (impact factor =2.437, 1/16 )
Chia-Song Wu, Hsing-Chung Liu, Hsien-Chin Chiu and Yi-Feng Lin, “Ka-band Bandpass Filter Using a CPW Structure Technology with Copper on an Al2O3Substrate”, Microwave Journal, vol.52, pp.102, 2009. (impact factor =0.52, 164/229)
Hsien-Chin Chiu, Po-Yu Ke, Che-Yu Kuo, Jeffrey S. Fu, Chih-Wei Yang and Feng-Tso Chien, “Voltage-controlled oscillator phase noise improvement using GaAs 0.5 μm Pt-buried gate enhancement-mode pHEMT”, Semicond. Sci. Technol., vol. 24, 095003 (5pp), 2009. (impact factor =1.434, 79/229 )
Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu, “High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-gate Technology”, J. Electrohem. Soc. vol 156, pp. H877-G880, 2009. (impact factor =2.437, 1/16 )
Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, and Jeffrey S. Fu, “A Novel Complementary Colpitts Differential CMOS VCO with Low Phase Noise Performance”, Microelectronics Journal, vol. 40, pp.1698-1704, 2009(impact factor =0.859, 132/229 )
2010年
Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, Ray-Ming Lin, Kuang-Po Hsueh, “Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs”, J. Electrohem. Soc. vol 157, pp. H160-H164, 2010. (impact factor =2.437, 1/16 )
Hsien-Chin Chiu, Chih-Pin Kao, “ A Wide Tuning Range 69 GHz Push-Push VCO using 0.18μm CMOS Technology”, IEEE Microwave and Wireless Components Letters, vol. 20, pp.97-99, 2010. (impact factor =2.302, 40/229)
Chia-Shih Cheng, Hsien-Chin Chiu, Shao-Wei Lin, Jeffrey S. Fu, “Improved Linearity Performance of AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-plate Voltage Technology”, has been accepted to be published in Microwave Journal, 2010. (impact factor =0.52, 164/229)
Chien-Cheng Wei, Hsien-Chin Chiu, Shao-Wei Lin, Ting-Huei Chen, Jeffrey S. Fu, Feng-Tso Chien, “A Comparison Study of CMOS T/R Switches Using Gate/Source-terminated Field-Plate Transistors” Microelectron. Eng., vol. 87, pp.225-229, 2010. (impact factor =1.583, 68/229 )
Jeffrey S. Fu, Po-Yu Ke, Che-Yu Kuo, and Hsien-Chin Chiu, “An X-band Ultra-low Phase Noise Differential Colpitts VCO Using 0.15-μm pHEMT Technology”, has been accepted to be published in International Journal of Electronics, vol. 96, No. x, pp.xxx-xxx, 2010. (impact factor =0.567, 160/229 )
Feng-Tso Chien, Da-Wei Lin, Chih-Wei Yang, Jeffrey S. Fu and Hsien-Chin Chiu, “A Low Insertion Loss GaAs pHEMT Switch Utilizing Dual n+-Doping AlAs Etching Stop Layers Design” Solid-State Electronics, vol 54, pp.231-234, 2010 (impact factor =1.424, 81/229)
Chien-Cheng Wei, Hsien-Chin Chiu, Hui-Chen Hsu, Wu-Shiung Feng, Jeffrey S. Fu, “ A Fully Integrated 24-GHz Differential Active Sub-harmonic Mixer Located in CMOS Multi-layer Marchand Baluns”, has been accepted to be published in IET Microwaves, Antennas & Propagation, (impact factor =0.813, 136/229)
Hsien-Chin Chiu, Chia-Shih Cheng, “On-State and Off-State Breakdown Voltages in GaAs pHEMTs with Various Field-plate and Gate-recess Extension Structures”, IEEE, Electron Device Lett., vol. 31, pp. 186-188, 2010. (impact factor =3.049, 23/229 )
Jia-Shuan Wu, Chia-Song Wu, Yung-Hsiang Lin, Hsien-Chin Chiu, Ray-Ming Lin, “An Improvement Passive Inductor Microwave Performance on GaN Substrates Using Ion Implantation Technology”, has been accepted to be published in International Journal of Electronics, vol. 96, No. x, pp.xxx-xxx, 2010. (impact factor =0.567, 160/229 )
Jeffrey S. Fu, Che-Yu Kuo, Shao-Wei Lin, Po-Yu Ke, Hsien-Chin Chiu, “A Wideband Gilbert Cell Mixer with an Integrated Marchand Balun Using 0.5m GaAs Enhancement-Mode pHEMT Technology” Microwave and Optical Technology Letter, vol 52, pp. 311-315, 2010. (impact factor =0.743, 144/229)
Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Jeffrey S. Fu, Cheng-Shun Wang, “Electrical and Reliability Characteristics of GaAs MOSHEMTs Utilizing High-k IIIB and IVB Oxide Layers” has been accepted to be published in Microelectronics Reliability, vol. 96, No. x, pp.xxx-xxx, 2010.(impact factor =1.29, 92/229 )
Jeffrey S. Fu, Dong-Hua Yang, Chin-I Yeh, Hsien-Chin Chiu, Kuo-Sheng Chin, Hsuan-Ling Kao and Jui-Ching Cheng, "Non-uniform Chebyshev Distributed Chirped Dumbbell-Shaped   Photonic Bandgap Structure (PBGs) Low Pass Filter," COMPEL-International Journal For Computation and Mathematics in Electrical and Electronic Engineering, USA, Feb. 2010, pp. 295-305 (impact factor=0.441, 178/229)
S. Maikap, S. Z. Rahaman, Hsien-Chin Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, M. -J. Tsai, “Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se0.6 solid electrolyte”, has been accepted to be published in Electrochemical and Solid-State Lett, vol. 13, 2010.(impact factor =2.001, 11/22 )
Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Chao-Wei Lin, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu, “GaAs Enhancement-Mode MOSHEMT with Pt/ZrO2/Ti/Au Composited Gate Structure”, Electrochemical and Solid-State Lett, vol. 13, pp.H188-H190, 2010. (impact factor =2.001, 11/22 )
Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu, Hsing-Yuan Tu, Shiang-Feng Tang, “High Thermal Stability AlGaAs/InGaAs Enhancement-Mode PHEMT Using Palladium-gate Technology” has been accepted to be published in Microelectronics Reliability, vol. 96, No. x, pp.xxx-xxx, 2010. (impact factor =1.29, 92/229 )
Feng-Tso Chien, Chien-Liang Chan, Chi-Ling Wang, Chien-Nan Liao, Yao-Tsung Tsai, Hsien-Chin Chiu, “Low Gate Leakage Current HFET Structure Fabricated by Using a Step-free Airbridge Gate Process”, Journal of the Korean Physical Society, vol. 56, no. 3, pp. 887-890 , 2010. (impact factor =1.328, 26/68 )
 

 

瀏覽數  
  • 友善列印
  • 新增到收藏夾
將此文章推薦給親友
請輸入此驗證碼
Voice Play
更換驗證碼