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長庚大學 綠色科技研究中心
分類清單
蔡家龍

蔡家龍

 副教授

電話

 3441 (Office) & 3748 (Lab)

Email

 cltsai@mail.cgu.edu.tw

實驗室

 替代能源實驗室 (工學院10)

學歷

  1. 清華大學電子工博士 ( 2005/8 )
  2. 中山大學電機工程碩士 ( 2000/8 )
  3. 雲林科技大學電子工程學士 ( 1998/8 )

經歷

  1. 長庚大學助理教授 ( 2006 - )

開授課程

103學年度第一學期

  • 材料科學導論
    物理光學
    光電半導體實務管理及案例研討

103學年度第二學期

  • 半導體製程
    半導體雷射

專長與研究領域

  • 高速半導體雷射
  • 半導體固態照明光源
  • 生物感測器
  • 太陽能電池

簡歷

Chia-Lung Tsai was born inYunlin, Taiwan, R.O.C., on July 17, 1976. He received the B.S. degree in electronic engineering from the National Yunlin University of Science & Technology, Yunlin, in 1998, the M.S. degree in electrical engineering from the National Sun-Yat-Sen UniversityKaohsiungTaiwan, in 2000, and the Ph.D. degree in electrical engineering from National Tsing-Hua UniversityHsinchu,Taiwan, in 2005. In 2006, he joined the Department of Electronic Engineering atChang Gung UniversityTao-YuanTaiwan, as an Assistant Professor. His current research interests focus on design and fabrication of III-V optoelectronic devices including VCSELs, solar cells, biosensors, and GaN-based LEDs, etc.

著作列表

Journal articles & book chapters:

[1]        C. L. Tsai, G. S. Liu, G. C. Fan, and Y. S. Lee, “Substrate-free large gap InGaN solar cells with bottom reflector,” Solid-State Electronics., vol. 54, pp. 541-544 (2010).

[2]        C. L. Tsai, G. S. Liu, Y. S. Lee, and G. C. Fan, “Enhanced luminescence of InGaN light-emitting diodes with strain-compensated superlattice barriers,” J. Electrochemical Society., vol. 157, pp. H260-H263 (2010).

[3]        C. L. Tsai, Y. L. Chou, Y. S. Wang, S. J. Chang, M. C. Wu, and W. Line, “1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-can package for optical fiber communications,” J. Electrochemical Society., vol. 156, pp. H903-H907 (2009).

[4]        C. L. Tsai, J. C. Huang, Y. L. Chou, F. M. Lee, and M. C. Wu, “Improved mode stability of long-wavelength GaInAsN vertical-cavity surface-emitting lasers by using the selectively Ge-coating layer,” Electrochemical and Solid-State Letters., vol. 12, pp. H420-H422 (2009).

[5]        C. L. Tsai, J. Q. Lin, F. M. Lee, Y. L. Chou, and M. C. Wu, “SiOx-planarized and TO-packaged oxide-confined VCSELs with ring-shape geometry for high-speed (10 Gb/s) operation,” J. Vac. Sci. Technol. B., vol. 27, pp. 156-160 (2009).

[6]        C. L. Tsai, J. Q. Lin, and J. P. Huang, “Fabrication and characterization of the substrate-free InGaN-based resonant-cavity light-emitting diodes for plastic optical fiber communications,” J. Vac. Sci. Technol. B., vol. 27, pp. 1080-1085 (2009).

[7]        Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H. Huang, and W. Lin, “High-speed InGaAs p-i-n photodetector with planar buried heterostructure,” IEEE Trans. Electron Devices., vol. 56, pp. 1347-1350 (2009).

[8]        R. M. Lin, Y. L. Chou, W. C. Tseng, C. L. Tsai, J. C. Li, and M. C. Wu, “Thermal stability for reflectance and specific contact resistance of Ni/Ag-based contacts on p-type GaN,” Electrochemical and Solid-State Letters., vol. 12, pp. H315-H318 (2009).

[9]        F. M. Lee, C. L. Tsai, C. W. Hu, F. Y. Cheng, M. C. Wu, and C. C. Lin, “High-reliable and high-speed 1.3 µm complex-coupled distributed feedback buried-heterostructure laser diodes with Fe-doped InGaAsP/InP hybrid grating layer grown by MOCVD,” IEEE Trans. Electron Devices., vol. 55, pp. 540-546 (2008).

[10]    C. L. Tsai, Y. L. Chou, R. M. Lin, F. M. Lee, M. C. Wu, and S. C. Ko, “An alternative method to fabricate the planar-type resonant-cavity light-emitting diodes by using silicon oxide for short-reach communications,” Materials Science in Semiconductor Processing., vol. 10, pp. 235-240 (2007).

[11]    F. M. Lee, C. L. Tsai, C. W. Hu, K. F. Huang, M. C. Wu, and S. C. Ko, “1.3-μm GaInAsN vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation,” IEEE Electron Device Lett., vol. 28, pp. 120-122 (2007).

[12]    C. W. Hu, F. M. Lee, K. F. Huang, C. L. Tsai, and M. C. Wu, “High performance 1.55 µm InGaAsP buried-heterostructure laser diodes fabricated by single-step MOCVD regrowth and self-aligned,” J. Electrochemical Society., vol. 154, pp. H263-H267 (2007).

[13]    C. W. Hu, F. M. Lee, K. F. Huang, C. L. Tsai, M. C. Wu, Y. H. Hung, and W. J. Ho, “Linear GRINSCH 1.55-μm InGaAsP/InP strained multiple quantum well laser diodes grown by substrate temperature control,” J. Electrochemical Society., vol. 153, pp. G309-G313 (2006).

[14]    C. W. Hu, F. M. Lee, K. F. Huang, M. C. Wu, C. L. Tsai, Y. H. Hung, and C. C. Lin, “Uncooled 1.3 µm complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP/InP hybrid current-blocking grating”, IEEE Photon. Technol. Lett., vol 18, pp. 1551-1553 (2006).

[15]    C. L. Tsai, C. W. Hu, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, and W. J. Ho, “High performance silicon oxide (SiOx) planarized GaInNAs vertical-cavity surface-emitting lasers,” IEEE Trans. Electron Devices., vol. 52, pp. 1033-1036 (2005).

[16]    C. L. Tsai, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho, “Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission,” IEEE Electron Device Lett., vol. 26, pp. 304-307 (2005).

[17]    C. L. Tsai, F. M. Lee, C. W. Hu, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho, “Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide,” J. Vac. Sci. Technol. B., vol. 23, pp. 1428-1433 (2005).

[18]    C. L. Tsai, C. W. Hu, C. Y. Huang, F. M. Lee, M. C. Wu, H. L. Wang, S. C. Ko, W. J. Ho, J. Huang, and J. R. Deng, “Fabrication and characterization of 650-nm resonant-cavity light-emitting diodes,” J. Vac. Sci. Technol. B., vol. 22, pp. 2518-2521 (2004).

[19]    M. Y. Wu, C. L. Tsai, M. C. Wu, C. L. Ho, and W. J. Ho, “1.3-µm compressive-strain GaInAsP/GaInAsP multi-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer,” Solid-State Electron., vol. 48, pp. 1651-1654 (2004).

[20]    M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, and W. J. Ho, “Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier,” J. Vac. Sci. and Technol. B., vol. 22, pp. 961-965 (2004).

[21]    M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, and W. J. Ho, “Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers,”Jpn. J. Appl. Phys., vol. 42, L1507-L1508 (2003).

Conference & proceeding papers:

[1]        C. L. Tsai, G. S. Liu, C. Y. Wang, J. P. Huang, and J. Q. Lin, “The improved photoresponse of the substrate-free InGaN solar cells with a bottom reflector,” Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, June 2009.

[2]        C. L. Tsai, G. S. Liu, J. Q. Lin, H. W. Tseng, and C. Y. Wang, “InGaN light-emitting diodes (LED) with the strained AlGaN/InGaN multiple quantum barriers,” IEEE Nanotechnology Materials and Devices Conference, Traverse City, Michigan, June 2009.

[3]        C. L. Tsai, G. S. Liu, Y. S. Lee, G. C. Fan, M. C. Wu and W. Lin, “Realization of TO packaged high-speed InGaAsP buried-heterostructure laser diodes by using a Fe-doped InP Layer, International Electron Devices & Material Symposia, Tao-Yuan, Taiwan, November 2009.

[4]        C. L. Tsai, J. P. Huang, and J. Q. Lin, “Fabrication of the improved performance of thin-film resonant-cavity light-emitting diodes by using laser lift-off and Ta2O5/SiO2 distributed Bragg reflector,” International Electron Devices & Material Symposia, Taichung, Taiwan, November 2008.

[5]        Y. L. Chou, P. C. Lin, C. L. Tsai, and M. C. Wu, “An alternative method to fabricate the RCLED by using silicon oxide for short-reach communications,” Optics and Photonics, TaichungTaiwan, December 2007.

[6]        F. M. Lee, C. L. Tsai, F. Y. Cheng, and M. C. Wu, “High speed donut shape oxide-confined 850-nm VCSELs with TO package,” International Electron Devices & Material Symposia, TainanTaiwan, December 2006.

[7]        F. M. Lee, C. W. Hu, C. L. Tsai, M. C. Wu, C. C. Lin, “Uncooled 1.3μm complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP/InP hybrid current-blocking grating,” Conference on Microelectronics Technology and Applications, Kaoshiung, Taiwan, May 2006.

[8]        C. L. Tsai, F. M. Lee, C. W. Hu, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho, “Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for fiber optic applications,” Second Asia-Pacific Workshop on Widegap Semiconductors, Hsinchu, Taiwan, March 2005, pp. 105-107.

[9]        S. C. Ko, C. L. Tsai, and H. L. Wang, “Silicon dioxide planarized GaInNAs VCSEL devices,” Optics and Photonics, TaoyuanTaiwan, December 2004.

[10]    M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho, “Enhancement of carrier injection of AlGaInAs/InP SC-MQW LDs using AlGaInAs graded-composition layer,” Electron Devices and Materials Symposium,Keelung, Taiwan, December 2003, pp. 351-353.

[11]    M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho, “Tensile-strain GaInP/GaInAsP quantum-barrier study on 1.3-µm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes,” Optics and Photonics,Taipei, Taiwan, December 2003, pp. 65-67.

Other:

[1]       C. L. Tsai, Y. Z. Chiou, and M. C. Wu, “The characteristics and development of InGaN solar cell”, 電信研究雙月刊, vol. 30, pp. 465-474 (2009).

 

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